Uniformity of deep levels in semi-insulating InP obtained by multiple-step wafer annealing

Journal of Electronic Materials

Volumn 27, Issue 5, 1998, Pages 462-465

  Kuriyama, K ^a   Ushiyama, K ^a   Tsunoda, T ^a   Uchida, M ^b   Yokoyama, K ^b  

^a HOSEI UNIVERSITY   (Japan)

^b Japan Energy   (Japan)

Author keywords

Defects; InP; Photoluminescence (PL); Semi insulating (SI)

Indexed keywords

EID: 0012757706     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0177-1     Document Type: Article

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