Fe doping and preparation of semi-insulating InP by wafer annealing under Fe phosphide vapor pressure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 985-988

  Uchida, Masayuki ^a   Asahi, Toshiaki ^a   Kainosho, Keiji ^a   Matsuda, Yuko ^a   Oda, Osamu ^a  

^a JAPAN ENERGY CORPORATION   (Japan)

Author keywords

Fe doping; InP; Semi insulating; Thermal diffusion; Vapor phase doping; Wafer annealing

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTAL GROWTH; CRYSTAL IMPURITIES; ELECTRIC VARIABLES MEASUREMENT; IRON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; THERMAL DIFFUSION; X RAY DIFFRACTION ANALYSIS;

IMPURITY SEGREGATION; VAN DER PAUW METHOD; VAPOR PHASE DOPING;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032663838     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.985     Document Type: Article

References (15)

1. I. Tan, J. E. Bowers and E. L. Hu: Proc. 7th Int. Conf. InP and Related Materials, Sapporo, 1995, p. 365.
2. K. Hagimoto, T. Kataoka, M. Yoneyama and I. Kobayashi: Proc. 9th Int. Conf. InP and Related Materials, Hyannis, 1997, p. 233.
3. A. Seidl, F. Mosel, J. Friedrich, U. Kretzer and G. Müller: Mater. Sci. Eng. B21 (1993) 321.
4. D. Hofmann, G. Müller and N. Streckfuss: Appl. Phys. A48 (1989) 315.
5. G. Hirt, D. Hofmann, F. Mosel, N. Schäfer and G. Müller: J. Electron. Mater. 20 (1991) 1065.
6. K. Kainosho, H. Okazaki and O. Oda: Proc. 5th Int. Conf. InP and Related Materials (Post-Deadline Papers) Paris, 1993, p. 33.
7. D. Wolf, G. Hirt, F. Mosel, G. Müller and J. Völkl: Mater. Sci. Eng. B28 (1994) 115.
8. K. Kainosho, M. Ohta, M. Uchida, M. Nakamura and O. Oda: J. Electron. Mater. 25 (1996) 353.
9. M. Uchida, K. Kainosho, M. Ohta and O. Oda: J. Electron. Mater. 27 (1998) 8.
10. G. Hirt, D. Wolf and G. Müler: Proc. 8th Conf. Semi-Insulating III-V Materials, Warsaw, 1994, p. 19.
11. D. Wolf, G. Hirt and G. Müller: J. Electron. Mater. 24 (1995) 93.
12. K. Kainosho, O. Oda and T. Asahi: Japan Patent Application P07276197 (1995).
13. R. Hirano and M. Uchida: J. Electron. Mater. 25 (1996) 347.
14. K. Kohiro, M. Ohta and O. Oda: J. Cryst. Growth 158 (1996) 197.
15. W. Franke, K. Meisel and R. Juza: Z. Anorg. U. Allgem. Chem. 218 (1934) 346.