Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances

Journal of Crystal Growth

Volumn 259, Issue 1-2, 2003, Pages 1-7

  Zhiyuan, Dong ^a   Youwen, Zhao ^a   Yiping, Zeng ^a   Manlong, Duan ^a   Wenrong, Sun ^a   Jinghua, Jiao ^a   Lanying, Lin ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Annealing; A1. Defects; A1. Etching; B2. Semiconducting indium phosphide

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); ETCHING; OPTICAL MICROSCOPY; PRECIPITATION (CHEMICAL);

SEMI-INSULATING MATERIALS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0141953884     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.07.009     Document Type: Article

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