Degradation of current drivability of Schottky barrier source/drain transistors induced by high-k gate dielectrics and possible measures to suppress the phenomenon

Solid-State Electronics

Volumn 50, Issue 5, 2006, Pages 788-794

  Ono, Mizuki ^a   Nishiyama, Akira ^a   Koyama, Masato ^a  

^a Device Process Development Center   (Japan)

Author keywords

Current drivability; High k gate dielectric; Schottky barrier source drain transistor

Indexed keywords

DEGRADATION; DIELECTRIC MATERIALS; GATES (TRANSISTOR); MISFET DEVICES; PERMITTIVITY;

CURRENT DRIVABILITY; HIGH-K GATE DIELECTRIC; OFF-STATE CHARACTERISTICS; SCHOTTKY BARRIER SOURCE/DRAIN TRANSISTOR;

SCHOTTKY BARRIER DIODES;

EID: 33744938414     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.03.043     Document Type: Article

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