Approach to optimizing n-SiC Ohmic contacts by replacing the original contacts with a second metal

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 3, 2006, Pages 1185-1189

  Ervin, Matthew H ^a   Jones, Kenneth A ^a   Lee, Unchul ^a   Wood, Mark C ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL PROPERTIES; FLEXIBILITY; NICKEL SILICIDES;

ANNEALING; ELECTRIC PROPERTIES; NICKEL; SILICON CARBIDE; THERMODYNAMIC PROPERTIES; TOPOLOGY;

OHMIC CONTACTS;

EID: 33744933689     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2190663     Document Type: Article

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