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Journal of Applied Physics

Volumn 99, Issue 10, 2006, Pages

Influence of doping density on electron dynamics in GaAs/AlGaAs quantum cascade lasers

(8) Jovanovic V D a,c Hofling S b Indjin, D a Vukmirovic N a Ikonic Z a Harrison, P a Reithmaier, J P b,d Forchel, A b

a UNIVERSITY OF LEEDS (United Kingdom)

b UNIVERSITY OF WÜRZBURG (Germany)

c LEHMAN BROTHERS (United States)

d UNIVERSITY OF KASSEL (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; GALLIUM COMPOUNDS; POISSON EQUATION;

DOPING DENSITY; ELECTRON DYNAMICS; ELECTRON HEATING; QUANTUM CASCADE LASERS; THRESHOLD CURRENT;

QUANTUM THEORY;

EID: 33744793245 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2194312 Document Type: Article

Times cited : (51)

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