High-temperature performance of GaAs-based bound-to-continuum quantum-cascade lasers

Applied Physics Letters

Volumn 83, Issue 23, 2003, Pages 4698-4700

  Pflugl C ^a   Schrenk, W ^a   Anders, S ^a   Strasser, G ^a   Becker, C ^b   Sirtori, C ^b   Bonetti, Y ^c   Muller, A ^c  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b THALES RESEARCH AND TECHNOLOGY   (France)

^c Alpes Lasers SA   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COOLING; CURRENT DENSITY; HIGH TEMPERATURE APPLICATIONS; LASER APPLICATIONS; LIGHT EMISSION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES; SPUTTERING;

LASER BARS; QUANTUM-CASCADE LASERS (QCL);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0347567462     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1633021     Document Type: Article

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