Bidirectional semiconductor laser

Science

Volumn 286, Issue 5440, 1999, Pages 749-752

  Gmachl, Claire ^a   Tredicucci, Alessandro ^a   Sivco, Deborah L ^a   Hutchinson, Albert L ^a   Capasso, Federico ^a   Cho, Alfred Y ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ARTICLE; CONTROLLED STUDY; ELECTRIC POTENTIAL; INFRARED RADIATION; LASER; LIGHT; PHOTON; PRIORITY JOURNAL; SEMICONDUCTOR; SPECTRAL SENSITIVITY;

EID: 0033595805     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.286.5440.749     Document Type: Article

References (23)

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5. C. Gmachl et al., IEEE J. Select. Topics Quantum Electron., 5, 808 (1999).
6. Certain bipolar semiconductor lasers, when biased in reverse polarity, can function as photodetectors, as has recently been demonstrated (19).
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8. This requirement makes the task of designing the bidirectional laser more difficult, as in general the applied electric field across any QC laser scales linearly with the energy of the optical transition.
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13. -) corresponds to an applied bias 0.09 V (0.64 V) higher than the design value, which results in a relative difference in the threshold voltage of only 0.55 V. This is in reasonable agreement with the experiment and its uncertainties.
14. A. Tredicucci et al., Nature 396, 350 (1998), and references (3-7) therein.
15. M. W. Sigrist, Air Monitoring by Spectroscopic Techniques (Wiley, New York, 1994), chap. 3 and 5.
16. For applications of QC lasers in general, a high operating temperature is highly desirable. Although operation up to room temperature is readily achieved in a pulsed, low-duty-cycle mode (5), continuous wave operation is at present limited to temperatures below 175 K (20). Promising proposals for improvements exist, for example, through suppression of the non-radiative recombination pathways (21, 22).
17. B. H. Yang et al., Appl. Phys. Lett. 72, 2220 (1998).
18. L. Olafsen et al., ibid., p. 2370.
19. D. A. Louderback, O. Sjölund, E. R. Hegblom, J. Ko, L. A. Coldren, IEEE Photonics Technol. Lett. 11, 304 (1999).
20. C. Gmachl et al., ibid., in press.
21. C. F. Hsu, J. S. O, P. S. Zory, D. Botez, Proc. SPIE 3001, 271 (1997).
22. K. W. Berryman, S. A. Lyon, M. Segev, J. R. Engholm, in IEEE/OSA CLEO'99 Conference (Optical Society of America, Washington, DC. 1999), p. 52.
23. We are grateful to S. N. G. Chu for his help with material characterization, in particular transmission electron microscopy, and to H. Kogelnik for stimulating discussions. This work has been supported in part by the Defense Advanced Research Projects Agency/ U.S. Army Research Office under contract DAAG5598-C-0050.