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Volumn 278, Issue 1-4, 2005, Pages 775-779

Reduction of the threshold current density of GaAs/AlGaAs quantum cascade lasers by optimized injector doping and growth conditions

(6) Hofling S a Kallweit, R a Seufert, J b Koeth, J b Reithmaier, J P a Forchel, A a

a UNIVERSITY OF WÜRZBURG (Germany)

b NANOPLUS NANOSYSTEMS AND TECHNOLOGIES GMBH (Germany)

Author keywords

A1. Doping; A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting gallium compounds; B3. Infrared devices; B3. Quantum cascade lasers

Indexed keywords

DOPING (ADDITIVES); INFRARED DEVICES; LASERS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

ARSENIC FLUXES; QUANTUM CASCADE LASERS; THRESHOLD CURRENT DENSITY; WAVE OPERATION;

QUANTUM THEORY;

EID: 18444407198 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.12.096 Document Type: Conference Paper

Times cited : (25)

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