Improved CW operation of GaAs-based QC lasers: Tmax = 150 K

IEEE Journal of Quantum Electronics

Volumn 40, Issue 6, 2004, Pages 665-672

  Page, Hideaki ^a   Dhillon, Sukhdeep ^a   Calligaro, Michel ^a   Becker, Cyrille ^a   Ortiz, Valentin ^a   Sirtori, Carlo ^a  

^a THALES RESEARCH AND TECHNOLOGY   (France)

Author keywords

Laser thermal devices; Quantum thermal factors; Semiconductor lasers

Indexed keywords

CURRENT DENSITY; HEAT RESISTANCE; SEMICONDUCTING GALLIUM ARSENIDE; TEMPERATURE; THRESHOLD VOLTAGE;

CURRENT INJECTION; LASER THERMAL DEVICES; QUANTUM CASCADE LASERS; QUANTUM THERMAL FACTORS; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 3042644133     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.828259     Document Type: Article

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