Mechanisms of dynamic range limitations in GaAsAlGaAs quantum-cascade lasers: Influence of injector doping

Applied Physics Letters

Volumn 86, Issue 21, 2005, Pages 1-3

  Jovanovic V D ^a   Indjin, D ^a   Vukmirovic N ^a   Ikonic Z ^a   Harrison, P ^a   Linfield, E H ^a   Page, H ^b   Marcadet, X ^b   Sirtori, C ^b   Worrall, C ^c   Beere, H E ^c   Ritchie, D A ^c  

^a UNIVERSITY OF LEEDS   (United Kingdom)

^b THALES RESEARCH AND TECHNOLOGY   (France)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TRANSPORT PROPERTIES; QUANTUM OPTICS; SCATTERING; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

INJECTOR DOPING; PUMPING CURRENT REGIME; QUANTUM-CASCADE LASERS; THRESHOLD ELECTRON TRANSPORT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 20844432667     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1937993     Document Type: Article

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