Lasing properties of GaAs/(Al, Ga)As quantum-cascade lasers as a function of injector doping density

Applied Physics Letters

Volumn 82, Issue 5, 2003, Pages 671-673

  Giehler, M ^a   Hey, R ^a   Kostial, H ^a   Cronenberg, S ^a   Ohtsuka, T ^a   Schrottke, L ^a   Grahn, H T ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOSTATS; CURRENT DENSITY; ELECTRONS; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; PHOTORESISTS; PLASMA ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SPECTROMETERS; X RAY DIFFRACTION ANALYSIS;

FOURIER-TRANSFORM SPECTROMETERS;

SEMICONDUCTOR LASERS;

EID: 0037415837     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1541099     Document Type: Article

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