SIMS investigation of the influence of Ge pre-deposition on the interface quality between SiC and Si

Surface and Interface Analysis

Volumn 36, Issue 8, 2004, Pages 969-972

  Pezoldt, J ^a   Zgheib, Ch ^a,b   Masri, P ^b   Averous, M ^b   Morales, F M ^c   Kosiba, R ^a   Ecke, G ^a   Weih, P ^a   Ambacher, O ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITÉ MONTPELLIER 2   (France)

^c UNIVERSITY OF CÁDIZ   (Spain)

Author keywords

AES; Ellipsometry; Heteroepitaxy; Interface control; SiC; SIMS

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DEPOSITION; ELLIPSOMETRY; EPITAXIAL GROWTH; GERMANIUM; MONOLAYERS; SECONDARY ION MASS SPECTROMETRY; SILICON; SILICON CARBIDE; SILICON ON INSULATOR TECHNOLOGY;

AES; HETEROEPITAXY; INTERFACE CONTROL;

SURFACE CHEMISTRY;

EID: 4444290610     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1814     Document Type: Conference Paper

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