SCOPUS 정보 검색 플랫폼

Volumn 1, Issue 2, 2004, Pages 341-346

The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon

(13) Morales, F M a Zgheib, Ch b,c Molina, S I a Araujo D a Garcia R a Fernandez C a Sanz Hervas A d Masri, P c Weih, P b Stauden, Th b Cimalla, V b Ambacher, O b Pezoldt, J b

a UNIVERSITY OF CÁDIZ (Spain)

b Institut fur Mikro und Nanotechnologien (Germany)

c UNIVERSITÉ MONTPELLIER 2 (France)

d UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CARBONIZATION; DEPOSITION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAIN SIZE AND SHAPE; HETEROJUNCTIONS; INTERFACES (MATERIALS); LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEGREGATION (METALLOGRAPHY); STRESS RELAXATION; THERMAL EXPANSION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EXPONENTIAL DECAY; PLANAR DEFECTS; STRUCTURAL QUALITY; THERMAL EXPANSION COEFFICIENT;

SILICON CARBIDE;

EID: 2342448059 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200303940 Document Type: Conference Paper

Times cited : (12)

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