Effects of silicon-on-insulator substrate on the residual stress within 3C-SiC/Si thin films

Applied Physics Letters

Volumn 83, Issue 10, 2003, Pages 1989-1991

  Park, J H ^a   Kim, J H ^a   Kim, Y ^a   Lee, B T ^a   Jang, S J ^b   Moon, C K ^c   Song, H J ^d  

^a Chonnam National University   (South Korea)

^b Dongshin University   (South Korea)

^c Korea Institute of Nuclear Safety (KINS)   (South Korea)

^d Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

RAMAN SCATTERING; RESIDUAL STRESSES; SILICON CARBIDE; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SINGLE CRYSTALS;

HETEROEPITAXIAL LAYERS;

THIN FILMS;

EID: 0141885049     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1608495     Document Type: Article

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