Strain accommodation of 3C-SiC grown on hydrogen-implanted Si (0 0 1) substrate

Journal of Crystal Growth

Volumn 257, Issue 3-4, 2003, Pages 321-325

  Zhang, Z C ^a   Chen, Y H ^a   Li, D B ^a   Zhang, F Q ^a   Yang, S Y ^a   Ma, B S ^a   Sun, G S ^a   Wang, Z G ^a   Zhang, X P ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

A1. Substrate; A3. Heteroepitaxy; A3. Low pressure chemical vapor deposition; B2. Semiconducting silicon carbide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FILM GROWTH; HYDROGEN; SEMICONDUCTOR MATERIALS; STRAIN; SUBSTRATES;

METALLIC IMPURITIES;

SILICON CARBIDE;

EID: 0041861180     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01476-3     Document Type: Article

References (18)

1. Kitabatake M. Thin Solid Films. 369:2000;257.
2. Lo Y.H. Appl. Phys. Lett. 59:1991;2311.
3. Vanhollebeke K., Moerman I., Van Daele P., Demeester P. Prog. Crystal Chara. Mater. 41:2000;1.
4. Chua C.L., Hsu W.Y., Lin C.H., Christenson G., Lo Y.H. Appl. Phys. Lett. 64:1994;3640.
5. Powell A.R., Iyer S.S., LeGoues F.K. Appl. Phys. Lett. 64:1994;1856.
6. Hansen D.M., Moran P.D., Dunn K.A., Babcock S.E., Matyi R.J., Kuech T.F. J. Crystal Growth. 195:1998;144.
7. Ejeckam F.E., Seaford M.L., Lo Y.H., Hu H.Q., Hammons B.E. Appl. Phys. Lett. 71:1997;776.
8. Zhang Z., Yang S., Zhang F., Li D., Chen Y., Wang Z. J. Crystal Growth. 243:2002;71.
9. Lubyshev D., Mayer T.S., Cai W.Z., Miller D.L. J. Crystal Growth. 202:1999;643.
10. Johnson N.M., Ponce F.A., Street R.A., Nemanich R.J. Phys. Rev. B. 35:1987;4166.
11. Jeng S.J., Oehrlein G.S., Scilla G.J. Appl. Phys. Lett. 53:1988;1735.
12. Bisero D., Corni F., Frabboni S., Tonini R., Ottaviani G. J. Appl. Phys. 83:1998;4106.
13. Trinkaus H. Appl. Phys. Lett. 76:2000;3552.
14. Rohmfeld S., Hundhausen M., Ley L. J. Appl. Phys. 91:2002;1113.
15. Bourret A. Appl. Surf. Sci. 164:2000;3.
16. Huang F.Y. Phys. Rev. Lett. 85:2000;784.
17. Gilles D., Weber E.R., Hahn S.K. Phys. Rev. Lett. 64:1990;196.
18. Mchugo S.A., Weber E.R. Appl. Phys. Lett. 69:1996;3060.