The role of formation and dissolution of C clusters on the oxygen incorporation during dry thermal oxidation of 6H-SiC

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 657-660

  Radtke, C ^a   Baumvol, I J R ^b   Ferrera, B C ^c   Stedile, F C ^c  

^a CEA SACLAY   (France)

^b UNIVERSITY OF CAXIAS DO SUL   (Brazil)

^c FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

Atomic transport; Carbon clusters; Isotopic tracing; Narrow nuclear resonant reaction profiling; Oxidation mechanisms

Indexed keywords

CARBON CLUSTERS; DISSOLUTION; ELECTRON TRANSPORT PROPERTIES; ISOTOPES; SILICON CARBIDE; THERMOOXIDATION;

ATOMIC TRANSPORT; ISOTOPIC TRACING; NARROW NUCLEAR RESONANT REACTION PROFILING; OXIDATION MECHANISMS;

SILICON WAFERS;

EID: 33744741886     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.657     Document Type: Conference Paper

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