Origin of the fluctuations in the luminescence emission in InGaN quantum wells

Materials Science in Semiconductor Processing

Volumn 9, Issue 1-3, 2006, Pages 2-7

  Martinez O ^a   Jimenez, J ^a   Bosi, M ^b   Albrecht, M ^c   Fornari, R ^c   Cusco R ^d   Artus L ^d  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b CNR   (Italy)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^d INSTITUTE OF EARTH SCIENCES JAUME ALMERA   (Spain)

Author keywords

Cathodoluminescence; InGaN QWs; Piezoelectric field

Indexed keywords

CATHODOLUMINESCENCE; DISLOCATIONS (CRYSTALS); LUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

INGAN QWS; NON-RADIATIVE RECOMBINATION; PIEZOELECTRIC FIELD;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33744519612     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.01.066     Document Type: Article

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