Photo-assisted electrochemical etching of a nano-gap trench with high aspect ratio for MEMS applications

Journal of Micromechanics and Microengineering

Volumn 16, Issue 5, 2006, Pages 906-913

  Kim, Hyeon Cheol ^a   Kim, Dae Hyun ^a   Chun, Kukjin ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ELECTROCHEMISTRY; ELECTROLYTES; ETCHING; LIGHT EMITTING DIODES; XENON;

COMB STRUCTURES; ELECTROCHEMICAL ETCHING; NANO-GAP TRENCHES;

MICROELECTROMECHANICAL DEVICES;

EID: 33744479708     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/16/5/005     Document Type: Article

References (14)

1. Yazdi N and Najafi K 2000 An all-silicon single-wafer micro-g accelerometer with a combined surface and bulk micromachining process J. Microelectromech. Syst. 9 544-50
2. Ayazi F and Najafi K 2001 A HARPSS polysilicon vibrating ring gyroscope J. Microelectromech. Syst. 10 169-79
3. Kim S-H, Lee S-H, Lim H-T and Kim Y-K 1997 (1 1 0) Silicon etching for high aspect ratio comb structures Proc. 6th Conf. Emerging Technologies and Factory Automation pp 248-52
4. Kim D H, Kim H C and Chun K 2004 Nano-gap accelerometer fabrication method using photo-assisted electrochemical etching Proc. 2nd Int. Symp. on Nanomanufacturing pp 506-11
5. Izuo S, Ohji H, French P J and Tsutsumi K J 2002 A novel electrochemical etching technique for n-type silicon Sensors Actuators A 97-98 720-4
6. Ohji H, Gennissen P T J, French P J and Tsutsumi K 2000 Fabrication of a beam-mass structure using single-step electrochemical etching for micro structures (SEEMS) J. Micromech. Microeng. 10 440-4
7. Chalton M D B and Parker G J 1997 Fabrication of high aspect ratio silicon microstructures by anodic etching J. Micromech. Microeng. 7 155-8
8. Charlton M D B 1996 High aspect ratio photo-assisted electro-chemical etching of silicon and its application for the fabrication of quantum wires and photonic band structures IEE Colloquium (Digest): Proc. IEE Colloquium on Microengineering Applications in Optoelectronics, no. 039 (London, Feb. 1996) pp 9/1-9/5
9. Pourkamali S and Ayazi F 2004 Fully single crystal silicon resonators with deep-submicron dry-etched transducer gaps Proc. 17th MEMS Conf. pp 813-6
10. Ayazi F and Najafi K 2000 High aspect-ratio combined poly and single-crystal silicon (HARPSS) MEMS technology J. Microelectromech. Syst. 9 288
11. Pourkamali S, Hashimura A, Abdolvand R, Ho G K, Erbil A and Ayazi F 2003 High-Q single crystal silicon HARPSS capacitive beam resonators with self-aligned sub-100-nm transduction gaps J. Microelectromech. Syst. 12 487
12. Weigold J W, Najafi K and Pang S W 2001 Design and fabrication of submicrometer, single crystal Si accelerometer J. Microelectromech. Syst. 10 518-24
13. Pourkamali S and Ayazi F 2004 Fully single crystal silicon resonators with deep-submicron dry-etched transducer gaps Proc. MEMS Conf. pp 813-6
14. Bettotti P, Negro L D, Gaburro Z, Pavesi L, Lui A, Galli M, Patrini M and Marabelli F 2002 P-type macroporous silicon for two-dimensional photonic crystals J. Appl. Phys. 92 6966-72