All-silicon single-wafer micro-g accelerometer with a combined surface and bulk micromachining process

Journal of Microelectromechanical Systems

Volumn 9, Issue 4, 2000, Pages 544-550

  Yazdi, Navid ^b,c,d,e   Najafi, Khalil ^a,c,f  

^a IEEE

^b Arizona State University   (United States)

^c UNIVERSITY OF MICHIGAN   (United States)

^d UNIVERSITY OF TEHRAN   (Iran)

^e UNIVERSITY OF WINDSOR   (Canada)

^f University of Michigan   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK MICROMACHINING PROCESS; MICROACCELEROMETER; PROOF MASS; TOTAL NOISE EQUIVALENT ACCELERATION;

ACCELEROMETERS; COMPUTER SIMULATION; FINITE ELEMENT METHOD; GRAVITATION; MICROMACHINING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SIGNAL TO NOISE RATIO; SILICON WAFERS;

MICROELECTROMECHANICAL DEVICES;

SILICON;

ACCELERATION; ARTICLE; ELECTRONICS; EQUIPMENT DESIGN; MATERIALS TESTING; MICROELECTRODE; NASA DISCIPLINE LIFE SCIENCES TECHNOLOGIES; NOISE; NON-NASA CENTER; SENSITIVITY AND SPECIFICITY;

NASA DISCIPLINE LIFE SCIENCES TECHNOLOGIES; NON-NASA CENTER;

ACCELERATION; ELECTRONICS; EQUIPMENT DESIGN; MATERIALS TESTING; MICROELECTRODES; MINIATURIZATION; NOISE; SENSITIVITY AND SPECIFICITY; SILICON;

EID: 0034351589     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/84.896777     Document Type: Article

References (23)

1. "ADXL50-monolithic accelerometer with signal conditioning," Analog Devices, Norwood, MA, 1993.
2. "MMAS40G10D - Micromachined accelerometer," Motorola, Phoenix, AZ, 1997.
3. F. Rudolf, A. Jornod, J. Berqvist, and H. Leuthold, "Precision accelerometers with μg resolution," Sensors Actuators, vol. A21-A23, pp. 297-302, 1990.
4. W. Henrion, L. DiSanza, M. Ip, S. Terry, and H. Jerman, "Wide-dynamic range direct digital accelerometer," in Tech. Dig. Solid-State Sensors Actuators Workshop, Hilton Head Island, SC, June 1990, pp. 153-156.
5. K. Warren, "Navigation grade silicon accelerometer with sacrifically etched SIMOX and BESOI structure," in Tech. Dig. Solid-State Sensors Actuators Workshop, Hilton Head Island, SC, June 1994, pp. 69-72.
6. J. Bernstein, R. Miller, W. Kelley, and P. Ward, "Low-noise MEMS vibration sensor for geophysical applications," J. Microelectromech. Syst., vol. 8, pp. 433-438, Dec. 1999.
7. T. V. Roszhart, H. Jerman, J. Drake, and C. de Cotiis, "An inertial-grade micromachined vibrating beam accelerometer," in Tech. Dig. Eighth Int. Conf. Solid-State Sensors Actuators, Stockholm, Sweden, June 1995, pp. 656-658.
8. C. Liu, A. M. Brazilai, J. K. Reynolds, A. Partridge, T. W. Kenny, J. D. Grade, and K. Rockstad, "Characterization of a high-sensitivity micromachined tunneling accelerometer with micro-g resolution," J. Microelectromech. Syst., vol. 2, pp. 235-244, June 1998.
9. O. Kromer, O. Fromhein, H. Gemmeke, T. Kuhner, J. Mohr, and M. Strohramann, "High-precision readout circuit for LIGA acceleration sensors," Sensors Actuators, vol. 46-47, pp. 196-200, 1995.
10. M. A. Schmidt, "Wafer-to-wafer bonding for microstructure formation," Proc. IEEE, vol. 86, pp. 1575-1585, Aug. 1998.
11. M. L. Kniffin and M. Shah, "Packaging for silicon micromachined accelerometers," Int. J. Microcircuits Electron. Packag., vol. 19, no. 1, pp. 75-86, First quarter 1996.
12. B. Boser and R. T. Howe, "Surface micromachined accelerometers," IEEE J. Solid-State Circuits, vol. 31, pp. 366-375, Mar. 1996.
13. N. Yazdi and K. Najafi, "An all-silicon single-wafer fabrication technology for precision microaccelerometers," in Tech. Dig. Ninth Int. Conf. Solid-State Sensors Actuators, Chicago, IL, June 1997, pp. 1181-1184.
14. T. B. Gabrielson, "Mechanical-thermal noise in micromachined acoustic and vibration sensors," IEEE Trans. Electron Devices, vol. 40, pp. 903-909, May 1993.
15. J. D. Zook et al., "Characteristics of polysilicon resonant microbeams," Sensors Actuators, pp. 51-59, Oct. 1992.
16. V. M. McNeil, M. Novack, and M. A. Schmidt, "Design and fabrication of thin-film microaccelerometer using wafer bonding," in Proc. IEEE Int. Conf. Sensors Actuators, Yokohama, Japan, June 1993, pp. 822-825.
17. B. Puers and W. Sansen, "Compensation structures for convex corner micromachining in silicon," Sensors Actuators, vol. A21-A23, pp. 1036-1041, 1990.
18. C. Standman, L. Rosengern, H. Elderstig, and Y. Bucklund, "Fabrication of 45° mirrors together with well-defined V-grooves using wet anisotropic etching of silicon," J. Microelectromech. Syst., vol. 4, pp. 213-219, Dec. 1995.
19. D. A. Monk, D. S. Soane, and R. T. Howe, "Sacrificial layer SiO2 wet etching for micromachining applications," in Tech. Dig. Sixth Int. Conf. Solid-State Sensors Actuators, San Francisco, CA, June 1991, pp. 647-650.
20. C. H. Mastragelo and C. H. Hsu, "Mechanical stability and adhesion of microstructures under capillary forces - Part II: Experiments," J. Microelectromech.Syst., vol. 2, pp. 44-55, Mar. 1993.
21. U. Srinivasan, M. R. Houston, R. T. Howe, and R. Maboudian, "Self-assembeled fluorcarbon films for enhanced stiction reduction," Tech. Dig. Int. Conf. Solid-State Sensors Actuators, pp. 1399-1402, June 1997.
22. Q. Bai and K. D. Wise, "A high-yield process for three-dimensional microelectrode arrays," in Tech. Dig. Solid-State Sensors Actuators Workshop, Hilton Head Island, SC, June 1996, pp. 262-265.
23. N. Yazdi and K. Najafi, "An interface IC for a capacitive silicon μg accelerometer," in Tech. Dig. IEEE Int. Solid-State Circuits Conf., San Francisco, CA, Feb. 1999, pp. 132-133.