A novel electrochemical etching technique for n-type silicon

Sensors and Actuators, A: Physical

Volumn 97-98, Issue , 2002, Pages 720-724

  Izuo, Shinichi ^a   Ohji, Hiroshi ^a   French, Patrick J ^b   Tsutsumi, Kazuhiko ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Electrochemical etching; High aspect ratio; Macroporous silicon; Micromachining

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ETCHING; HYDROFLUORIC ACID; MASKS; MICROMACHINING; MORPHOLOGY; ORGANIC COMPOUNDS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILANES; SILICA; SILICON NITRIDE;

DIMETHYLFORMAMIDE; ELECTROCHEMICAL ETCHING; HIGH ASPECT RATIO; MACROPOROUS SILICON; TETRAETHOXYSILANE;

SILICON WAFERS;

EID: 0036544394     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(02)00010-9     Document Type: Conference Paper

References (5)