High aspect ratio photo-assisted electro-chemical etching of silicon and its application for the fabrication of quantum wires and photonic band structures

IEE Colloquium (Digest)

Volumn , Issue 39, 1996, Pages

  Charlton, M D B ^a   Lau, H W ^a   Parker, G J ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ASPECT RATIO; CRYSTALLINE MATERIALS; ENERGY GAP; ETCHING; INTEGRATED CIRCUIT MANUFACTURE; LIGHT POLARIZATION; POROUS SILICON; SEMICONDUCTOR QUANTUM WIRES;

PHOTONIC BAND STRUCTURE;

INTEGRATED OPTOELECTRONICS;

EID: 0030408913     PISSN: 09633308     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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