Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching

Surface Science

Volumn 600, Issue 11, 2006, Pages 2288-2292

  Zhang, J ^a   Turner, S G ^a   Chiam, S Y ^a   Liu, R ^b   Tok, E S ^b   Wee, A T S ^b   Huan, A C H ^c   Kelly, I ^d   Mulcahy, C P A ^d  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d BRUNEL UNIVERSITY   (United Kingdom)

Author keywords

Growth; Molecular beam epitaxy; Secondary ion mass spectroscopy; Surface segregation; X ray diffraction

Indexed keywords

ETCHING; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THIN FILMS; X RAY DIFFRACTION;

ATOMIC HYDROGEN ETCHING; GROWTH; INTERFACE QUALITY; SURFACE SEGREGATION;

HETEROJUNCTIONS;

EID: 33646936069     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.03.045     Document Type: Article

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