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Volumn 498, Issue 1-2, 2002, Pages 123-134

Thermal stability and hydrogen induced abstraction of silyl groups on Si(1 0 0) surfaces

(5) Lutterloh, C a Wicklein, M b Dinger, A b Biener, J a Kuppers J a,b

a MAX PLANCK INSTITUT FÜR PLASMAPHYSIK (Germany)

Author keywords

Chemisorption; Etching; Hydrogen atom; Low index single crystal surfaces; Silicon; Surface chemical reaction; Thermal desorption

Indexed keywords

ACTIVATION ENERGY; ADSORPTION; CHEMISORPTION; HYDROGEN; MASS SPECTROMETRY; SEMICONDUCTING SILICON; SURFACES; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

SILYL GROUPS;

SURFACE REACTIONS;

EID: 0036467575 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)01515-1 Document Type: Article

Times cited : (11)

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