Arsenic doping kinetics in silicon during gas source molecular beam epitaxy

Surface Science

Volumn 397, Issue 1-3, 1998, Pages 164-169

  Xie, M H ^a   Zhang, J ^a   Fernandez, J M ^a   Lees, A K ^a   Joyce, B A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Adsorption desorption kinetics; Doping; Gas source molecular beam epitaxy (GSMBE); Silicon

Indexed keywords

ADSORPTION; ARSENIC; CRYSTAL ORIENTATION; DESORPTION; DOPING (ADDITIVES); FILM GROWTH; MOLECULAR BEAM EPITAXY; REACTION KINETICS; SECONDARY ION MASS SPECTROMETRY; SILANES; SURFACE PHENOMENA; SURFACE STRUCTURE;

CAPACITANCE VOLTAGE CHARACTERISTICS; GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

SEMICONDUCTING SILICON;

EID: 0031990476     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00728-0     Document Type: Article

References (13)

1. Y. Ota, J. Appl. Phys. 51 (1980) 1102.
2. M.-H. Xie, A.K. Lees, J.M. Fernandez, J. Zhang, B.A. Joyce, J. Cryst. Growth 173 (1997) 336.
3. H. Jorke, Surf. Sci. 193 (1988) 569.
4. J.F. Nutzel, G. Abstreiter, J. Appl. Phys. 78 (1995) 937.
5. M. Leihr, C.M. Greenlief, M. Offenberg, R. Kasi, J. Vac. Sci. Technol. A 8 (1990) 2960.
6. J. Zhang, A.K. Lees, A.G. Taylor, M.-H. Xie, B.A. Joyce, Z. Sobiesierski, D.I. Westwood, J. Cryst. Growth 175/176 (1997) 477.
7. R.D. Bringans, Crit. Rev. Sol. State Mater. Sci. 17 (1992) 353.
8. W.K. Liu, S.M. Mokler, N. Ohtani, B.A. Joyce, Surf. Sci. 264 (1992) 309.
9. J.J. Harris, D.E. Ashenford, C.T. Foxon, P.J. Dobson, B.A. Joyce, Appl. Phys. A 33 (1984) 87.
10. M.-H. Xie, J. Zhang, A.K. Lees, J.M. Fernandez, B.A. Joyce, Surf. Sci. 367 (1996) 3231.
11. T. Ide, Phys. Rev. B 51 (1995) 1722.
12. N. Sugiyama, S. Imai, Y. Kawaguchi, J. Cryst. Growth 150 (1995) 994.
13. P.W. Atkins, Physical Chemistry, 5th ed., chap. 26, Oxford University Press, 1994.