New electrically thinned intrinsic-channel SOI MOSFET with 0.01 μm channel length

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1659-1662

  Shimatani, Tamio ^a   Pidin, Sergey ^a   Koyanagi, Mitsumasa ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Intrinsic channel; Monte Carlo simulation; MOSFET; Short channel effect; SOI; Statistical variation of impurity atoms

Indexed keywords

EID: 0002204985     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1659     Document Type: Article

References (3)

1. T. Hashimoto, Y. Sudoh, H. Kurino, A. Narai, S. Yokoyama, Y. Horiike and M. Koyanagi: Ext. Abstr. 1992 Int. Conf. Solid State Devices and Materials (Business Center for Academic Societies Japan, Tokyo, 1992) p. 490.
2. M. Koyanagi, H. Kurino, H. Hashimoto, Y. Sudoh and S. Yokoyama: Tech. Dig. Int. Electron Devices Meet. (1992) p. 1019.
3. M. Ono, M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro and H. Iwai: Tech. Dig. Int. Electron Devices Meet. (1993) p. 119.