Low thermal budget selective epitaxial growth for formation of elevated source/drain MOS transistors

Journal of Crystal Growth

Volumn 264, Issue 1-3, 2004, Pages 79-85

  Nakahata, Takumi ^a   Sugihara, Kohei ^a   Abe, Yuji ^a   Ozeki, Tatsuo ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

A1. Crystal morphology; A3. Chemical vapor deposition process; A3. Selective epitaxy; B2. Semiconducting silicon; B3. Field effect transistor

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DEPOSITION; DISSOCIATION; DRY ETCHING; ELECTRODES; FIELD EFFECT TRANSISTORS; LITHOGRAPHY; LSI CIRCUITS; MORPHOLOGY; OPTIMIZATION; PLASMA ETCHING; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTAL MORPHOLOGY; DEOXIDATION; SELECTIVE EPITAXY;

EPITAXIAL GROWTH;

EID: 1342285528     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.12.072     Document Type: Article

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