Variable threshold-voltage SOI CMOSFETs with implanted back-gate electrodes for power-managed low-power and high-speed sub-1-V ULSIs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 124-125

  Kachi, Tsuyoshi ^a   Kaga, Toru ^a   Wakahara, Shoji ^a   Hisamoto, Digh ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DELAY CIRCUITS; ELECTRIC CURRENTS; ELECTROCHEMICAL ELECTRODES; ENERGY UTILIZATION; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; ION IMPLANTATION; OSCILLATORS (ELECTRONIC); OXIDES; SILICON ON INSULATOR TECHNOLOGY; ULSI CIRCUITS;

CMOSFET DEVICES; DRAIN CURRENT; GATE ELECTRODES; IMPLANTED BACK GATE ELECTRODES; POWER CONSUMPTION; RING OSCILLATOR; VARIABLE THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0029720155     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)