Significant effects of as ion implantation on si-selective epitaxy by ultrahigh vacuum chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 9 A, 1999, Pages 5046-5047

  Furukawa, Taisuke ^a   Nakahata, Takumi ^a   Maruno, Shigemitsu ^a   Tokuda, Yasunori ^a   Satoh, Shinichi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Epitaxial growth; Ion implantation; LSI; MOSFET; UHV CVD; XPS

Indexed keywords

ARSENIC; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; EPITAXIAL GROWTH; ETCHING; ION IMPLANTATION; LSI CIRCUITS; MORPHOLOGY; SEMICONDUCTOR GROWTH; SPUTTERING; VACUUM APPLICATIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

ISLAND GROWTH;

SILICON WAFERS;

EID: 0033340125     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5046     Document Type: Article

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