The influence of post-annealing on the chemical structures and dielectric properties of the surface layer of Ba0.6Sr0.4TiO 3 films

Journal of Physics D: Applied Physics

Volumn 39, Issue 11, 2006, Pages 2473-2479

  Liao, J X ^a   Yang, C R ^a   Tian, Z ^a   Yang, H G ^a   Jin, L ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CARBON; CONTAMINATION; CRYSTALLIZATION; DEPOSITION; DIELECTRIC PROPERTIES; MAGNETRON SPUTTERING; PEROVSKITE; SILICON COMPOUNDS; THIN FILMS; TITANIUM OXIDES; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

BARIUM STRONTIUM TITANATE (BST); CONVENTIONAL THERMAL ANNEALING (CTA); RADIO FREQUENCY MAGNETRON SPUTTERING; RAPID THERMAL ANNEALING (RTA);

BARIUM COMPOUNDS;

EID: 33646907645     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/39/11/024     Document Type: Article

References (33)

1. Fan W, Kabius B, Hiller J M, Saha S, Carlisle J A, Auciello O, Chang R P H and Ramesh R 2004 J. Appl. Phys. 94 6192
2. Wang H W, Nien S W and Lee K-C 2004 Appl. Phys. Lett. 84 2874
3. Lookman A, McAneney J, Bowman R M, Gregga J M, Kut J, Rios S, Ruediger A, Dawber M and Scott J F 2004 Appl. Phys. Lett. 85 5010
4. Jang S I and Jang H M 2000 Ceram. Int. 26 421
5. Zhu X H, Zheng D N and Peng W 2004 J. Crys. Growth 268 192
6. Leu C C, Chan S H and Chen H Y 2000 Microelectron. Reliab. 40 679
7. Saha S and Krupanidhi S B 2004 Appl. Phys. Lett. 79 111
8. Park J H, Hong D H and Kim Y B 2002 Appl. Phys. 91 10022
9. Hwang C S, Park S O and Cho H J 1995 Appl. Phys. Lett. 67 2819
10. Lee B T and Hwang C S 2000 Appl. Phys. Lett. 77 124
11. Sinnamon L J, Bowman R M and Gregg J M 2001 Appl. Phys. Lett. 78 1724
12. Goux L, Gervais M and Catherinot A 2003 Mater. Sci. Semicond. Process. 5 189
13. Regnery S, Ehrhart P, Fitsilis F and Waser R 2004 J. Eur. Ceram. Soc. 24 271
14. Zhou C and Newns D M 1997 J. Appl. Phys. 82 3081
15. Fujisaki Y, Shimamoto Y and Matsui Y 1999 Japan. J. Appl. Phys. 38 L52
16. Craciun V and Singh R K 2000 Appl. Phys. Lett. 76 1932
17. Im J, Streiffer S K and Auciello O 2000 Appl. Phys. Lett. 77 2593
18. Cho H J, Oh S and Kang C S 1997 Appl. Phys. Lett. 71 3221
19. Craciun V, Boyd I W, Craciun D, Andreazza P and Perriere J 1999 J. Appl. Phys. 85 8410
20. Miot C, Proustz C, Husson E, Erre R, Blondiaux G, Beny J M and Coutures J P 1997 Mater. Sci. and Eng. B45 17
21. Nasser S A 2000 Appl. Surf. Sci. 157 14
22. Moulder J F, Stickle W F and Sobol P E 1995 Handbook of X-Ray Photoelectron Spectroscopy (Eden Prairie, MN: Physical Electronics)
23. Stannard W B, Johnston P N, Walker S R, Bubb I F, Scott J F, Cohen D D, Dytlewski N and Martin J W 1995 Integr. Ferroelectr. 9 243
24. Hashimoto S, Tanaka A, Murata A and Sakurada T 2004 Surf. Sci. 556 22
25. Wong H Y, Ong C W, Kwok R W M, Wong K W, Wong S P and Cheung W Y 2000 Thin Solid Films 376 131
26. Kim J N, Shin K S, Kim D H, Park B O, Kim N K and Cho S H 2003 Appl. Surf. Sci. 206 119
27. Lee S Y and Tseng T Y 2002 Appl. Phys. Lett. 80 1797
28. Sinnamon L J, Saad M M, Bowman R M and Gregg J M 2002 Appl. Phys. Lett. 81 703
29. Wang S F, Chu J P, Chen C L and Mahalingam T 2005 J. Appl. Phys. 98 014107
30. Lee W J, Kim H G and Yoon S G 1996 J. Appl. Phys. 80 5891
31. Wontae C, Charles M G, Kim W J, Jeffrey M P, Steven W K, Syed B Q, Douglas B C and James S H 2000 J. Appl. Phys. 87 3044
32. Sharma A, Ban Z G, Alpay S P and Mantese J V 2004 Appl. Phys. Lett. 5 986
33. Park W Y, Ahn K H and Hwang C S 2003 Appl. Phys. Lett. 83 4388