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Applied Physics Letters

Volumn 80, Issue 10, 2002, Pages 1797-1799

Electrical and dielectric behavior of MgO doped Ba 0.7Sr 0.3TiO3 thin films on Al2 O3 substrate

(2) Lee, S Y a Tseng, T Y a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; APPLIED ELECTRIC FIELD; BST FILM; BST THIN FILMS; CRYSTALLINITIES; DC RESISTIVITY; DIELECTRIC BEHAVIOR; GRAIN SIZE; HIGH DIELECTRIC CONSTANTS; HIGH TUNABILITY; RF MAGNETRON SPUTTERING TECHNIQUE; TIME-DEPENDENT DIELECTRIC BREAKDOWN; TIO;

BARIUM; ELECTRIC FIELDS; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; OXYGEN VACANCIES; OXYGENATION; SUBSTRATES; THICK FILMS; THIN FILMS;

SEMICONDUCTOR DOPING;

EID: 79956004257 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1458067 Document Type: Article

Times cited : (93)

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