Effect of alumina addition on Bi-Ti-Al-O dielectric thin films

Electrochemical and Solid-State Letters

Volumn 9, Issue 7, 2006, Pages

  Min, Yo Sep ^a,c   Asanov, Igor P ^b,d   Hwang, Cheol Seong ^c  

^a Korea Advanced Nano Fab Center (KANC)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Seoul National University   (South Korea)

^d Samsung Electro Mechanics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; DIELECTRIC FILMS; ENERGY GAP; FERMI LEVEL; PERMITTIVITY;

BISMUTH TITANATE; N-TYPE MATERIAL; NANOLAMINATE FILMS; VALENCE BAND;

THIN FILMS;

EID: 33646871858     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2197972     Document Type: Article

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