Self-assembled endotaxial α-FeSi2 nanowires with length tunability mediated by a thin nitride layer on (001)Si

Applied Physics Letters

Volumn 88, Issue 19, 2006, Pages

  Chen, S Y ^a   Chen, H C ^a   Chen, L J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; IRON COMPOUNDS; MORPHOLOGY; NITRIDES; SELF ASSEMBLY;

ENDOTAXIAL GROWTH; SELF-ASSEMBLED EPITAXIAL SILICIDE; THIN NITRIDE LAYER;

NANOSTRUCTURED MATERIALS;

EID: 33646708932     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2202701     Document Type: Article

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