Transformation of electrically active defects as a result of annealing of silicon implanted with high-energy ions

Semiconductors

Volumn 40, Issue 5, 2006, Pages 543-548

  Antonova, I V ^a   Shaimeev S S ^a   Smagulova, S A ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b NORTH EASTERN FEDERAL UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33646580364     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S106378260605006X     Document Type: Article

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