Room temperature migration of ion beam injected point defects in crystalline silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 120, Issue 1-4, 1996, Pages 9-13

  Privitera, Vittorio ^a   Coffa, Salvatore ^a   Priolo, Francesco ^b   Kyllesbech Larsen, Kim ^b   Libertino, Sebania ^b   Carnera, Alberto ^c  

^a CNR   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

^c UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DIFFUSION IN SOLIDS; ION BOMBARDMENT; ION IMPLANTATION; POINT DEFECTS; SEMICONDUCTOR DOPING;

VACANCY-TYPE DEFECTS;

SEMICONDUCTING SILICON;

EID: 0030566456     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00472-7     Document Type: Article

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