Relaxation of a defect subsystem in silicon irradiated with high-energy heavy ions

Semiconductors

Volumn 37, Issue 5, 2003, Pages 546-550

  Smagulova, S A ^a   Antonova, I V ^b   Neustroev, E P ^a   Skuratov, V A ^c  

^a NORTH EASTERN FEDERAL UNIVERSITY   (Russian Federation)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037683137     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1575358     Document Type: Article

References (12)

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