Inspection of defects and metallic contamination in SiGe:B CMOS using an in-line photoluminescence monitor

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6106, Issue , 2006, Pages

  Liao, Chin I ^a   Buczkowski, Andrzej ^b   Chien, C C ^a   Huang, K T ^a   Li, Zhiqiang ^b   Walker, Tom ^b   Hummel, Steve G ^b   Tzou, S F ^a  

^a UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^b Accent Optical Technologies   (United States)

Author keywords

CMOS; Contamination; Defect; Photoluminescence; Process monitoring; SiGe; Strain

Indexed keywords

CONTAMINATION; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); GERMANIUM COMPOUNDS; HOLE MOBILITY; PHOTOLUMINESCENCE; SILICON COMPOUNDS; STRAIN;

BORON PRECIPITATION; PROCESS MONITORING; SIGE; UNIFORMITY VARIATIONS;

CMOS INTEGRATED CIRCUITS;

EID: 33646556744     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.645605     Document Type: Conference Paper

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