Photoluminescence mapping system applicable to 300mm silicon-on-insulator wafers

Japanese Journal of Applied Physics

Volumn 41, Issue 12B, 2002, Pages L1505-L1507

  Tajima, Michio ^a   Li, Zhiqiang ^a   Shimidzu, Ryosuke ^b  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b Photon Design Co   (Japan)

Author keywords

Mapping; Microscopy; Photoluminescence; Si; Silicon on insulator; Unibond wafer

Indexed keywords

LASER EXCITATION; MAPPING; MICROSCOPIC EXAMINATION; PHOTOLUMINESCENCE; SILICON; SILICON ON INSULATOR TECHNOLOGY; ULTRAVIOLET LASERS;

BAND-EDGE EMISSIONS; DEEP LEVEL EMISSION; EXCITATION SOURCES; FULL WAFER MAPPINGS; PHOTOLUMINESCENCE MAPPING; SILICON ON INSULATOR WAFERS; SPATIAL RESOLUTION; UNIBOND;

SILICON WAFERS;

EID: 0142207270     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.41.L1505     Document Type: Article

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