Hydrostatic stress and hydrostatic stress gradients in passivated copper interconnects

Materials Science and Engineering: A

Volumn 423, Issue 1-2, 2006, Pages 157-165

  Ang, D ^a   Ramanujan, R V ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Finite element method; Microelectronic reliability; Scaling effects; Stress voiding

Indexed keywords

ASPECT RATIO; COMPUTER SOFTWARE; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; MICROELECTRONICS; RELIABILITY; STRESSES;

HYDROSTATIC STRESS; HYDROSTATIC STRESS GRADIENTS; MICROELECTRONIC RELIABILITY; PASSIVATED COPPER INTERCONNECTS; SCALING EFFECTS; STRESS VOIDING;

COPPER;

ASPECT RATIO; COMPUTER SOFTWARE; COPPER; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; MICROELECTRONICS; RELIABILITY; STRESSES;

EID: 33646474272     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msea.2005.10.079     Document Type: Article

References (35)

1. Totta P.A. In: Li C.Y., Totta P., and Ho P.S. (Eds). Proceedings of the First International Workshop. American Institute of Physics, Ithaca, New York (1991) 1-20
2. Jones Jr. R.E., and Basehore M.L. Appl. Phys. Lett. 50 (1987) 725-727
3. Greenebaum B., Sauter A.I., Flinn P.A., and Nix W.D. Appl. Phys. Lett. 58 (1991) 1845-1847
4. Sauter A.I., and Nix W.D. IEEE Trans. Comp. Hybrids Manuf. Technol. 15 (1992) 594-600
5. Burges U., Eppler I., Schilling W., Schroeder H., and Trinkaus H. In: Paul S.H., Bravmen J., and Li C.Y. (Eds). Proceedings of the Third International Workshop. American Institute of Physics, Stanford, CA (1995) 2-19
6. T. Marieb, A.S. Mack, N. Cox, D. Gardner, X.C. Mu, in: H.J. Frost, M.A. Parker, C.A. Ross, E.A. Holm (Eds.), Materials Research Society Symposium Proceedings, vol. 403, 1996, pp. 639-644.
7. Shen Y.L. J. Appl. Phys. 82 (1997) 1578-1581
8. Gouldstone A., Shen Y.L., Suresh S., and Thompson C.V. J. Mater. Res. 13 (1998) 1956-1966
9. Wikström A., Gudmundson P., and Suresh S. J. Appl. Phys. 86 (1999) 6088-6095
10. Rhee S.H., Du Y., and Ho P.S. J. Appl. Phys. 93 (2003) 3926-3933
11. Ang D., and Ramanujan R.V. In: Khor A., Ramanujan R.V., Ooi C.P., and Zhao J. (Eds). Third International Conference on Materials Processing for Properties and Performance, vol. 3. Singapore, November 24-26 (2004) 450-460
12. McNally P.J., Kanatharana J., Toh B.H.W., McNeill D.W., Danilewsky A.N., Tuomi T., Knuuttila L., Riikonen J., Toivonen J., and Simon R. J. Appl. Phys. 96 (2004) 7596-7602
13. Ege E.S., and Shen Y.L. J. Elect. Mater. 32 (2003) 1000-1011
14. Zhao J.H., Qi W.J., and Ho P.S. Microelectron. Reliab. 42 (2002) 27-34
15. Shi L.T., and Tu K.N. J. Appl. Phys. 65 (1994) 1516-1518
16. Shi L.T., and Tu K.N. J. Appl. Phys. 77 (1995) 3037-3041
17. Sekiguchi A., Koike J., and Maruyama K. J. Appl. Phys. 83 (2003) 1962-1964
18. Niwa H., Yagi H., and Tsuchikawa H. J. Appl. Phys. 68 (1990) 328-333
19. Korhonen M.A., Black R.D., and Li C.-Y. J. Appl. Phys. 69 (1991) 1748-1755
20. King J.A. Materials Handbook for Hybrid Microelectronics (1988), Artech House, Boston
21. Paik J.M., Park H., and Joo Y.C. Microelectron. Eng. 71 (2004) 348-357
22. D. Ang, C.C. Wong, R.V. Ramanujan, Thin Solid Films, in press.
23. Hasunuma M., Kaneko H., Sawabe A., Kawanoue T., Kohanawa Y., Komatsu S., and Miyauchi M. IEEE International Electron Devices Meeting, Technical Digest, IEEE (1989), Washington, DC, USA 677-680
24. Kordic S., Wolters R.A.M., and Troost K.Z. J. Appl. Phys. 74 (1993) 5391-5394
25. Yeo I.S., and Ho P.S. IEEE Proceedings of the International Reliability Physics Symposium, IEEE (1996), Dallas, TX, USA 131-138
26. Lokker J.P., Janssen G.C.A.M., and Radelaar S. Microelectron. Eng. 50 (2000) 257-263
27. Jawarani D., Kawasaki H., Yeo I.S., Rabenberg L., Stark J.P., and Ho P.S. J. Appl. Phys. 82 (1997) 1563-1577
28. Borgesen P., Lee J.K., Gleixner R., and Li C.Y. Appl. Phys. Lett. 60 (1992) 1706-1708
29. Sekiguchi A., Koike J., and Maruyama K. Mater. Trans. 43 (2002) 1633-1637
30. Okabayashi H. Mater. Sci. Eng. R11 (1993) 191-241
31. Horváth J., Birringer R., and Gleiter H. Solid State Commun. 62 (1987) 319-322
32. Gan D., Ho P.S., Huang R., Leu J., Maiz J., and Scherban T. J. Appl. Phys. 97 (2005) 1-8
33. http://www.hkltechnology.com/data/0-Cu-lines.pdf
34. Korhonen M.A., Paszkiet C.A., and Li C.Y. J. Appl. Phys. 69 (1991) 8083-8091
35. Sekiguchi A., Koike J., and Maruyama K. Appl. Phys. Lett. 83 (2003) 1962-1964