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Volumn 892, Issue , 2006, Pages 63-68

High power AlGaN/GaN schottky barrier diode with 1000 v operation

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; GALLIUM NITRIDE; HETEROJUNCTIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; THIN FILMS;

ALGAN/GAN HETEROSTRUCTURES; CONTACT RESISTANCE; GATE FIELD PLATE STRUCTURE; REVERSE LEAKAGE CURRENT;

SCHOTTKY BARRIER DIODES;

EID: 33646415095 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (2)

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