SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium Proceedings

Volumn 831, Issue , 2005, Pages 343-348

AlGaN/GaN field effect schottky barrier diode for a low loss switching device

(6) Yoshida, Seikoh a Ikeda, Nariaki a Li, Jiang a Hataya, Kohji a Wada, Takahiro a Takehara, Hironari a

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; FIELD EFFECT SEMICONDUCTOR DEVICES; HETEROJUNCTIONS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES;

FIELD EFFECT SCHOTTKY BARRIER DIODES (FESBD); FREEWHEELING DIODES; OHMIC ELECTRODES; SCHOTTKY BARRIER METALS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 23844538764 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (1)

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