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Volumn 75, Issue 5, 1999, Pages 668-670

High-resistance buried layers by MeV Fe implantation in n-type InP

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; ION IMPLANTATION; IRON; SOLUBILITY;

EID: 0032620140     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124476     Document Type: Article
Times cited : (27)

References (9)
  • 9
    • 0002372939 scopus 로고
    • edited by S. Pantelides Gordon and Breach, New York
    • S. G. Bishop, in Deep Centers in Semiconductors, edited by S. Pantelides (Gordon and Breach, New York, 1986), p. 541.
    • (1986) Deep Centers in Semiconductors , pp. 541
    • Bishop, S.G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.