Ultra high fmax InP/InGaAs/InP transferred substrate DHBTs

Device Research Conference - Conference Digest, DRC

Volumn 2002-January, Issue , 2002, Pages 107-108

  Lee, S ^a   Urteaga, M ^a   Wei, Y ^a   Kim, Y ^a   Dahlstrom M ^a   Krishnan, S ^a   Rodwell, M ^a  

^a University of California   (United States)

Author keywords

Bandwidth; Cutoff frequency; DH HEMTs; Double heterojunction bipolar transistors; Frequency synthesizers; High power amplifiers; Microwave amplifiers; Network synthesis; Optical fiber amplifiers; Semiconductor optical amplifiers

Indexed keywords

ALUMINUM; BANDWIDTH; CUTOFF FREQUENCY; ELECTRIC BREAKDOWN; FIBER AMPLIFIERS; FREQUENCY SYNTHESIZERS; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE AMPLIFIERS; OPTICAL FIBERS; POWER AMPLIFIERS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR OPTICAL AMPLIFIERS; SUBSTRATES; SYNTHESIS (CHEMICAL); TRANSISTORS;

DH-HEMTS; DIRECT DIGITAL FREQUENCY SYNTHESIS; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; FIBER-OPTIC TRANSMISSIONS; HIGH POWER AMPLIFIER; NETWORK SYNTHESIS; SINGLE HETEROJUNCTION BIPOLAR TRANSISTOR; VERY HIGH SPEED INTEGRATED CIRCUITS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84948686594     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2002.1029538     Document Type: Conference Paper

References (4)

1. M. Rodwell, Q. Lee, D. Mensa, J. Guthrie, S. Jaganathan, T. Mathew, and S. Long, "48 GHz Digital ICs Using Transferred Substrate HBT", IEEE GaAs IC Symp. Tech. Dig., 1998, pp. 113-117
2. max transferred-substrate heterojunction bipolar transistor IC technology", IEEE Electron Device Lett., 1998, 19, pp. 77-79
3. Q. Lee, S. C. Martin, D. Mensa, R. P. Smith, J. Guthrie, and M. J. W. Rodwell, "Submicron transferred-substrate heterojunction bipolar transistors", IEEE Electron Device Lett., 1999, 20, (8), pp. 396-398
4. max=425 GHz", IEE Elec. Lett., 2001, 37(17), pp. 1096