In situ observation of surface processes in InAs/GaAs(001) heteroepitaxy: The role of As on the growth mode

Applied Physics Letters

Volumn 78, Issue 4, 2001, Pages 431-433

  Ohtake, Akihiro ^a,b   Ozeki, Masashi ^a,b  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b Angstrom Technology Partnership (ATP)   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003123047     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1342216     Document Type: Article

References (25)

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