Characterization of platinum germanide/Ge(100) Schottky barrier height for Ge channel Metal Source/Drain MOSFET

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 359-362

  Ikeda, Keiji ^a   Maeda, Tatsuro ^a   Takagi, Shin ichi ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Ge; Ge on Insulator; Germanide; MOSFET; Schottky barrier height

Indexed keywords

ANNEALING; GERMANIUM; INTERFACES (MATERIALS); MOSFET DEVICES; PLATINUM COMPOUNDS; SEMICONDUCTING GERMANIUM COMPOUNDS;

GE-ON-INSULATOR; GERMANIDE; MOSFET; SCHOTTKY BARRIER HEIGHT;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 33646075725     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.06.119     Document Type: Article

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