High rate epitaxy of silicon thick films by medium pressure plasma chemical vapor deposition

Journal of Applied Physics

Volumn 99, Issue 7, 2006, Pages

  Kambara, M ^a   Yagi, H ^a   Sawayanagi, M ^a   Yoshida, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; BOUNDARY LAYERS; CALORIMETRY; COAGULATION; EPITAXIAL GROWTH; PARTIAL PRESSURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILANES; SUBSTRATES; THICK FILMS;

BOUNDARY LAYER THICKNESS; FILM STRUCTURES; MEAN FREE PATH;

SILICON;

EID: 33645967494     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2181279     Document Type: Article

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