Ultrafast deposition of microcrystalline Si by thermal plasma chemical vapor deposition

Journal of Applied Physics

Volumn 89, Issue 12, 2001, Pages 8311-8315

  Chae, Y K ^a   Ohno, H ^a   Eguchi, K ^a   Yoshida, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035875477     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1370365     Document Type: Article

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