High-rate growth of epitaxial silicon at low temperatures (530-690 °C) by atmospheric pressure plasma chemical vapor deposition

Thin Solid Films

Volumn 444, Issue 1-2, 2003, Pages 138-145

  Mori, Y ^a   Yoshii, K ^a   Yasutake, K ^a   Kakiuchi, H ^a   Ohmi, H ^a   Wada, K ^b  

^a OSAKA UNIVERSITY   (Japan)

^b Silicon Technology Corporation   (Japan)

Author keywords

Chemical vapor deposition; Epitaxy; Plasma processing and deposition; Silicon

Indexed keywords

ATMOSPHERIC PRESSURE; EPITAXIAL GROWTH; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS;

EPITAXIAL SILICON;

SILICON;

EID: 0142106809     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)01148-9     Document Type: Article

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