Improvement of the reverse leakage behavior of Ag-based ohmic contacts for GaN-based light-emitting diodes using MgZnO interlayer

Materials Science and Engineering: B

Volumn 129, Issue 1-3, 2006, Pages 176-179

  Hong, Hyun Gi ^a   Song, June O ^b   Lee, Takhee ^a   Ferguson, I T ^b   Kwak, Joon Seop ^c   Seong, Tae Yeon ^d  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c Sunchon National University   (South Korea)

^d Korea University   (South Korea)

Author keywords

GaN; LEDs; MgZnO; Ohmic contact

Indexed keywords

ELECTRIC RESISTANCE; FLIP CHIP DEVICES; LEAKAGE CURRENTS; LIGHT EMITTING DIODES; MAGNESIUM COMPOUNDS; OHMIC CONTACTS; SILVER;

INTERLAYERS; MGZNO; REVERSE LEAKAGE CURRENT; SPECIFIC CONTACT RESISTANCE;

GALLIUM NITRIDE;

EID: 33645849808     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.01.009     Document Type: Article

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