SCOPUS 정보 검색 플랫폼

Nanotechnology

Volumn 16, Issue 8, 2005, Pages 1119-1122

Random capacitance modulation due to charging/discharging in Si nanocrystals embedded in gate dielectric

(8) Liu, Y a Chen, T P a Ng, C Y a Tse, M S a Zhao, P a Fu, Y Q b Zhang, S b Fung, S c

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

c UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; CHARACTERIZATION; DIELECTRIC MATERIALS; ELECTRIC CHARGE; ELECTRIC DISCHARGES; EMBEDDED SYSTEMS; GATES (TRANSISTOR); MULTICARRIER MODULATION; NANOSTRUCTURED MATERIALS;

DISCHARGING; GATE DIELECTRIC; NANOCRYSTALS; RANDOM CAPACITANCE;

SILICON;

EID: 21144456454 PISSN: 09574484 EISSN: None Source Type: Journal
DOI: 10.1088/0957-4484/16/8/022 Document Type: Article

Times cited : (8)

References (13)

1
- 0037455103
- Kouvatsos D N, Ioannou-Sougleridis V and Nassiopoulou A G 2003 Appl. Phys. Lett. 82 397
- (2003) Appl. Phys. Lett. , vol.82 , Issue.3 , pp. 397
- Kouvatsos, D.N.¹ Ioannou-Sougleridis, V.² Nassiopoulou, A.G.³

2
- 0000298224
- Tiwari S, Rana F, Hanafi H, Hartstein A, Crabbé E F and Chan K 1996 Appl. Phys. Lett. 68 1377
- (1996) Appl. Phys. Lett. , vol.68 , Issue.10 , pp. 1377
- Tiwari, S.¹ Rana, F.² Hanafi, H.³ Hartstein, A.⁴ Crabbé, E.F.⁵ Chan, K.⁶

3
- 0000108790
- Tiwari S, Rana F, Chan K, Shi L and Hanafi H 1996 Appl. Phys. Lett. 69 1232
- (1996) Appl. Phys. Lett. , vol.69 , Issue.9 , pp. 1232
- Tiwari, S.¹ Rana, F.² Chan, K.³ Shi, L.⁴ Hanafi, H.⁵

4
- 0035339613
- Han K, Kim I and Shin H 2001 IEEE Trans. Electron Devices 48 874
- (2001) IEEE Trans. Electron Devices , vol.48 , Issue.5 , pp. 874
- Han, K.¹ Kim, I.² Shin, H.³

5
- 0000188381
- Tan Y T, Kamiya T, Durrani Z A K and Ahmed H 2001 Appl. Phys. Lett. 78 1083
- (2001) Appl. Phys. Lett. , vol.78 , Issue.8 , pp. 1083
- Tan, Y.T.¹ Kamiya, T.² Durrani, Z.A.K.³ Ahmed, H.⁴

6
- 0001370307
- Takahashi N, Ishikuro H and Hiramoto T 2000 Appl. Phys. Lett. 76 209
- (2000) Appl. Phys. Lett. , vol.76 , Issue.2 , pp. 209
- Takahashi, N.¹ Ishikuro, H.² Hiramoto, T.³

7
- 79955987719
- Kapetanakis E, Normand P, Tsoukalas D and Beltsios K 2002 Appl. Phys. Lett. 80 2794
- (2002) Appl. Phys. Lett. , vol.80 , Issue.15 , pp. 2794
- Kapetanakis, E.¹ Normand, P.² Tsoukalas, D.³ Beltsios, K.⁴

8
- 0035920644
- Baron T, Gentile P, Magnea N and Mur P 2001 Appl. Phys. Lett. 79 1175
- (2001) Appl. Phys. Lett. , vol.79 , Issue.8 , pp. 1175
- Baron, T.¹ Gentile, P.² Magnea, N.³ Mur, P.⁴

9
- 0142026321
- Wu W, Gu J, Ge H, Keimel C and Chou S Y 2003 Appl. Phys. Lett. 83 2268
- (2003) Appl. Phys. Lett. , vol.83 , Issue.11 , pp. 2268
- Wu, W.¹ Gu, J.² Ge, H.³ Keimel, C.⁴ Chou, S.Y.⁵

10
- 12344254947
- Ng C Y, Chen T P, Liu Y, Tse M S and Gui D 2005 Electrochem. Solid-State Lett. 8 G8
- (2005) Electrochem. Solid-State Lett. , vol.8 , Issue.1 , pp. 8
- Ng, C.Y.¹ Chen, T.P.² Liu, Y.³ Tse, M.S.⁴ Gui, D.⁵

11
- 1642454706
- Liu Y, Fu Y Q, Chen T P, Liu Y, Fu Y Q, Tse M S, Fung S, Hsieh J-H and Yang X H 2003 Japan. J. Appl. Phys. 42 L1394
- (2003) Japan. J. Appl. Phys. , vol.42
- Liu, Y.¹ Fu, Y.Q.² Chen, T.P.³ Liu, Y.⁴ Fu, Y.Q.⁵ Tse, M.S.⁶ Fung, S.⁷ Hsieh, J.-H.⁸ Yang, X.H.⁹

12
- 0142071738
- Liu Y, Chen T P, Fu Y Q, Tse M S, Fung S, Hsieh J-H and Liu Y C 2003 J. Phys. D: Appl. Phys. 36 L97
- (2003) J. Phys. D: Appl. Phys. , vol.36 , Issue.19 , pp. 97
- Liu, Y.¹ Chen, T.P.² Fu, Y.Q.³ Tse, M.S.⁴ Fung, S.⁵ Hsieh, J.-H.⁶ Liu, Y.C.⁷

13
- 8344229848
- Chen T P, Liu Y, Sun C Q, Tse M S, Hsieh J-H, Fu Y Q, Liu Y C and Fung S 2004 J. Phys. Chem. B 108 16609
- (2004) J. Phys. Chem. B , vol.108 , Issue.43 , pp. 16609
- Chen, T.P.¹ Liu, Y.² Sun, C.Q.³ Tse, M.S.⁴ Hsieh, J.-H.⁵ Fu, Y.Q.⁶ Liu, Y.C.⁷ Fung, S.⁸

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